? semiconductor components industries, llc, 2005 april, 2005 ? rev. 3 1 publication order number: mbrs230lt3/d mbrs230lt3 surface mount schottky power rectifier smb power surface mount package this device employs the schottky barrier principle in a metal?to?silicon power rectifier. features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. features ? compact package with j?bend leads ideal for automated handling ? highly stable oxide passivated junction ? guardring for over?voltage protection ? low forward voltage drop ? pb?free package is available mechanical characteristics ? case: molded epoxy ? epoxy meets ul 94, v?0 @ 0.125 in. ? weight: 95 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? maximum temperature of 260 c/10 seconds for soldering ? available in 12 mm tape, 2500 units per 13 reel, add at3o suffix to part number ? cathode polarity band http://onsemi.com smb case 403a plastic schottky barrier rectifier 2.0 amperes 30 volts marking diagram device package shipping 2 ordering information mbrs230lt3 smb 2500/tape & reel mbrs230lt3g smb (pb?free) 2500/tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. alyw 2bl3 a = assembly location l = wafer lot y = year w = work week = pb?free package (note: microdot may be in either location)
mbrs230lt3 http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 v average rectified forward current (at rated v r , t c = 110 c) i o 2.0 a peak repetitive forward current (at rated v r , square wave, 20 khz, t c = 105 c) i frm 4.0 a non?repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 40 a storage/operating case temperature t stg , t c ?55 to +175 c operating junction temperature t j ?55 to +125 c voltage rate of change (rated v r , t j = 25 c) dv/dt 10,000 v/ s maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol value unit thermal resistance, junction?to?lead (note 1) thermal resistance, junction?to?ambient (note 1) r jl r ja 18.6 135 c/w electrical characteristics maximum instantaneous forward voltage (note 2) v t j = 25 c t j = 125 c v m ax i mum i ns t an t aneous f orwar d v o lt age (n o t e 2) (i f = 2.0 a) see figure 2 (i f = 4.0 a) v f 0.50 0.60 0.45 0.63 v maximum instantaneous reverse current (note 2) i t j = 25 c t j = 125 c a m ax i mum i ns t an t aneous r everse c urren t (n o t e 2) (v r = 30 v) see figure 4 (v r = 15 v) i r 1 0.31 75 35 ma 1. minimum pad size (0.108 x 0.085 ) for each lead on fr4 board. 2. pulse test: pulse width 250 s, duty cycle 2.0%. figure 1. typical forward voltage figure 2. maximum forward voltage 0.6 0 v f , instantaneous forward voltage (volts) 10 1 0.01 0.1 0.4 v f , maximum instantaneous forward voltage (volts) 0.5 0.3 0.2 0.6 0 10 1 0.1 0.2 0.4 0.5 0.1 0.3 0.7 0.8 0.1 i f , instantaneous forward current (amps) t j = 125 c 100 c 25 c ?55 c i f , instantaneous forward current (amps) t j = 125 c 100 c 25 c
mbrs230lt3 http://onsemi.com 3 figure 3. typical reverse current figure 4. maximum reverse current 30 0 v r , reverse voltage (volts) 100e?3 10e?3 10 15 20 30 0 v r , reverse voltage (volts) 100e?3 10e?3 1e?3 100e?6 10e?6 10 20 25 i r , reverse current (amps) 25 5 1e?3 100e?6 1e?6 10e?6 t j = 125 c t j = 100 c t j = 25 c t j = 125 c t j = 100 c t j = 25 c 515 i r , maximum reverse current (amps) figure 5. current derating per leg figure 6. forward power dissipation per leg 40 80 20 t c , case temperature ( c) 2.0 1.0 0 i o , average forward current (amps) 0.5 2.0 0 1.8 1.2 1.0 0.4 0 60 140 120 1.0 1.5 0.6 3.0 freq = 20 khz 3.5 1.5 0.5 2.5 3.5 2.5 3.0 0.2 0.8 1.4 dc 100 0 i o , average forward current (amps) square wave ipk/io = ipk/io = 5.0 ipk/io = 10 ipk/io = 20 1.6 p fo , average power dissipation (watts) t j = 125 c dc square wave ipk/io = ipk/io = 5.0 ipk/io = 10 ipk/io = 20 figure 7. thermal response 0.1 t, time (s) 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 1.0 10 100 1000 r(t), transient thermal resistance (normalized) r j lead = 18.6 r j ambient = 150
mbrs230lt3 http://onsemi.com 4 package dimensions smb plastic package case 403a?03 issue d a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 8:1 2.743 0.108 2.159 0.085 2.261 0.089 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mbrs230lt3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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